EDN

GaN fundamentals: 2DEG, crystal structure, and figure of merit

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.
Electronic Design

eGaN® FET – Silicon Power Shoot Out: A Retrospective

In mid-2010, GaN FET technology was made available to the general power conversion engineering community when Efficient Power Conversion (EPC) introduced the industry’s first commercially available ...