Cree Inc. announces a series of packaged diodes that deliver one of the highest blocking voltages available in SiC Schottky technology. Cree Inc. announces a series of packaged diodes that deliver one ...

This application note presents the real Schottky diodes as the best choice for lowest forward voltage drop. This document describes the low, medium and high voltage level applications, as well as ...

CAMARILLO, Calif.--(BUSINESS WIRE)--Semtech Corporation (Nasdaq: SMTC), a leading supplier of high-performance analog and mixed-signal semiconductors and advanced algorithms, announced the ...

Vishay Intertechnology, Inc. has announced the introduction of 16 new silicon carbide (SiC) Schottky diodes available in 650 V and 1200 V ratings, housed in the SOT-227 package. Designed for ...

40 A to 240 A Dual-Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36 V and QC Down to 56 nC MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc.

RIR Power Electronics Ltd announced the launch of its silicon carbide (SiC)-merged-PiN Schottky (MPS) diodes, marking a significant advancement in power device technology for next-generation electric ...

Fairchild Semiconductor has introduced a series of Schottky diodes that are energy and space efficient, addressing the needs of space-constrained, power-hungry portable applications. To further ...

The junction composed of traditional metals and 2D semiconductors is a key component of semiconductor devices. Ideally, Schottky barrier height (SBH) can be obtained based on the relative alignment of ...

Cree Inc. announces a series of packaged diodes that deliver what is reportedly the industry’s highest blocking voltage available in SiC Schottky technology. These 1,700-V Z-Rec Schottky diodes ...

MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 ...